Researchers at Georgia Tech have developed a transistor based on epitaxial graphene nanoribbons. This invention utilizes the epitaxial graphene’s property of one-dimensional transport as well as the Klein tunneling properties of charge carriers across gaps and other barriers to generate significant tunneling efficiency and localized electronic transport properties in the semiconductor device. Control of the current flow is achieved with one-dimensional electronic structures physically located near the edge of the nanoribbon. The epitaxial nanoribbons are interrupted by a gap, which allows current can flow only when electronic charges cross the gap. Other performance enhancements attainable by fabricating device based on this invention include modulating the Klein tunneling rate with conventional electrostatic gating of the gap material and using two one-dimensional quantum-mechanical transport channels to achieve ballistic transport.
- Allows dissipation-less, room temperature current flow in a one-dimensional, single channel graphene nanoribbon structure
- Higher tunneling efficiencies
- High-performance semiconductor electronics and systems
- Integrates easily
- Improved energy distribution
- Development of new nanostructures
- Engineering of the semiconductor bandgap at the molecular level
- Solar cells and smartphone batteries
- Nanoelectrics and biosensing
- Specialized industrial and military applications
The use of graphene for the development of energy efficient and high performance electronic components is a subject of intense research and development. Graphene possesses extraordinary physical and chemical characteristics such as its ability to provide a ‘one-atom’ thick layer, dissipate heat much faster than other materials like silicon, and compatibility with planar processing methods used in the semiconductor industry. All of these properties make it ideal for use in hybrid electronic circuits and next-generation computing devices.